Биполярные транзисторы с изолированным затвором (IGBT) Infineon's 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
Биполярные транзисторы с изолированным затвором (IGBT) High speed hard switching 600 V, 60 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation.
Биполярные транзисторы с изолированным затвором (IGBT) High speed hard switching 600 V, 60 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation.
Биполярные транзисторы с изолированным затвором (IGBT) Infineon's 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
Биполярные транзисторы с изолированным затвором (IGBT) Infineon's 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
Биполярные транзисторы с изолированным затвором (IGBT) High speed hard switching 600 V, 90 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution
